860 MHz/ 27.8 dB gain push-pull amplifier
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D252
CGY887B 860 MHz, 27.8 dB gain push-pull amplifier
Produc...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D252
CGY887B 860 MHz, 27.8 dB gain push-pull amplifier
Product specification 2001 Nov 27
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
FEATURES Excellent linearity High gain Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION
Side view
handbook, halfpage
CGY887B
PINNING - SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output DESCRIPTION
1
2
3
5
7
8
9
MSA319
Hybrid dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies.
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 27.2 28 295 MAX. 27.8 29 325 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage (single tone) storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 30 70 +100 +100 V dBmV °C °C UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
860 MHz, 27.8 dB gain push-pull amplifier
CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL PARAMETER power gain slope straigh...
Similar Datasheet