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CGY21

Siemens Semiconductor Group

GaAs MMIC

CGY 21 GaAs MMIC q q q q q q q q q CGY 21 Two-stage monolithic microwave IC (MMIC amplifier) All gold metallization C...


Siemens Semiconductor Group

CGY21

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CGY 21 GaAs MMIC q q q q q q q q q CGY 21 Two-stage monolithic microwave IC (MMIC amplifier) All gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Ω input/output; RLIN RLOUT > 10 dB Gain: 21 dB at 500 MHz Low noise figure: 3.9 dB at 500 MHz Bandwidth: 2 GHz Hermetically sealed package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code Circuit Diagram (Pin Configuration) Package1) TO-12 CGY 21 Q68000-A5953 1 2 3 4 RF output, VS Interstage, VS RF input RF and DC ground, case 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 CGY 21 Maximum Ratings Parameter Supply voltage, TC ≤ 80 ˚C Total power dissipation, TC ≤ 50 ˚C Channel temperature Storage temperature range Thermal Resistance Channel - case RthchC 50 K/W Symbol VS Ptot Tch Tstg Values 6 2 150 – 55 … + 150 Unit V W ˚C Note: Exceeding any of the maximum ratings may cause permanent damage to the device. Appropriate handling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to achieve guaranteed RF performance and stable operation conditions and provides adequate heat sink. Low parasitic capacitance of the bias network to port 2 gives optimum gain and flatness. Input and output connections must be DC isolated by coupling...




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