CGY2032BTS

INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Mar 14 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier FEATURES Power Amplifier (PA) overall efficiency 55% 27.5 dBm saturated output power at 3.2 V 0 dBm input power 40 dB linear gain Operation without negative supply Wide operating temperature range −30 to +85 °C SSOP16 package. APPLICATIONS CGY2032BTS 1.88 to 1.9 GHz transceivers for DECT applications 2 GHz transceivers: Personal Handy phone System (PHS), Digital Cellular System (DCS) and Personal Communication Services (PCS). GENERAL DESCRIPTION The CGY2032BTS is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate from 3.6 V battery supply. No negative supply voltage is required for operation. QUICK REFERENCE DATA SYMBOL VDD IDD Po Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2032BTS BLOCK DIAGRAM PACKAGE NAME SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT369-1 positive supply voltage total drain current output power ambient temperature PARAMETER(1) MIN. − − − −30 TYP. 3.2 350 27.5 − MAX. − − − +85 UNIT V mA dBm °C handbook, halfpage VDD1 VDD2 VDD3 5 1 8 11 CGY2032BTS RFI 16 15 9,10 GND1 6, 7 2, 3, 4 12, 13, 14 FCA080 RFO OPM GND2 GND3 Fig.1 Block dia...