CGY2014

INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier FEATURES Operates at 3.6 V battery supply voltage Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band Input power: 5 dBm in GSM band and DCS/PCS band Wide operating temperature range from Tamb = −20 to +85 °C HTSSOP20 exposed die pad package. APPLICATIONS Dual-band systems: Low Band (LB) from 880 to 915 MHz hand-held transceivers for E-GSM and High Band (HB) from 1710 to 1910 MHz for DCS/PCS applications. QUICK REFERENCE DATA SYMBOL VDD IDD(LB) Po(LB)(max) IDD(HB) Po(HB)(max) Tamb supply voltage GSM positive peak supply current maximum output power in GSM band DCS/PCS positive peak supply current maximum output power in DCS/PCS band ambient temperature PARAMETER MIN. − − 34.5 − 32 −20 GENERAL DESCRIPTION CGY2014ATW The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The circuit is specifically designed to operate at 3.6 V battery supply voltage. The power amplifier requires only a 30 dB harmonic low-pass filter to comply with the transmit spurious specification. The voltages applied on pins VDD (drain) control the power of the power amplifier and enable it to be switched off. TYP. 3.5 2 35 1.5 32.5 − MAX. 5.2 − − − − +85 UNIT V A dBm A dBm °C ORDERIN...