Document
STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Type
STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω
27 A 27 A(1) 27 A 27 A 27 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)* area ■ Higher VDSS rating ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested ■ High dv/dt capability
Applications
3 1
D²PAK
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
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■ Switching applications
Description
'
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
3
!-V
Package
Packaging
STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5
October 2011
35N65M5 35N65M5 35N65M5 35N65M5 35N65M5
D²PAK TO-220FP
I²PAK TO-220 TO-247
Doc ID 15325 Rev 3
Tape and reel Tube Tube Tube Tube
1/22
www.st.com
22
Contents
Contents
STB/F/I/P/W35N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
.......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 15325 Rev 3
STB/F/I/P/W35N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, D²PAK TO-247, I²PAK
TO-220FP
VGS ID ID IDM (2) PTOT
IAR
EAS dv/dt (3)
Gate-source voltage
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
Total dissipation at TC = 25 °C Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 27 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS
±25 27 27 (1) 17 17 (1) 108 108 (1) 160 40
9
800
15
2500
- 55 to 150 150
Unit
V A A A W A
mJ V/ns
V
°C °C
Table 3. Thermal data
Symbol
Parameter
Value Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionambient max
Rthj-pcb
Thermal resistance junction-pcb max
0.78 30
3.1 62.5
0.78 °C/W 50 °C/W °C/W
Tl
Maximum lead temperature for soldering purpose
300 °C
Doc ID 15325 Rev 3
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Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W35N65M5
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on resistance
VGS = 10 V, ID = 13.5 A
Min. Typ. Max. Unit
650 V 1 µA
100 µA 100 nA 3 4 5V 0.085 0.098 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
3750
pF
- 84 - pF
5.5 pF
Co(tr)(1)
Equivalent capacitance time related
VGS = 0, VDS = 0 to 520 V
- 220 - pF
Co(er)(2)
Equivalent capacitance energy related
VGS = 0, VDS = 0 to 520 V
- 75 - pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
- 1.6 - Ω
Qg Total gate charge
VDD = 520 V, ID = 13.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
83 nC - 19 - nC
35 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance .