STF35N65M5

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω 27 A 27 A(1) 27 A 27 A 27 A 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on)* area ■ Higher VDSS rating ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested ■ High dv/dt capability Applications 3 1 D²PAK 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ■ Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking 3 !-V Package Packaging STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 October 2011 35N65M5 35N65M5 35N65M5 35N65M5 35N65M5 D²PAK TO-220FP I²PAK TO-220 TO-247 Doc ID 15325 Rev 3 Tape and reel Tube Tube Tube Tube 1/22 www.st.com 22 Contents Contents STB/F/I/P/W3...