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F10U150S Dataheets PDF



Part Number F10U150S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description DAMPER DIODE
Datasheet F10U150S DatasheetF10U150S Datasheet (PDF)

FFPF10U150S FFPF10U150S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • Suitable for damper diode in horizontal deflection circuits 12 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM IF(AV) IFSM Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 125°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating J.

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FFPF10U150S FFPF10U150S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • Suitable for damper diode in horizontal deflection circuits 12 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM IF(AV) IFSM Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 125°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and StorageTemperature Value 1500 10 100 - 65 to +150 Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 2.0 Electrical Characteristics TC=25 °C unless otherwise noted Symbol Parameter VFM * IRM * Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR trr Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/µs) tfr Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) VFRM Maximum Forward Recovery Voltage * Pulse Test: Pulse Width=300µs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Min. - - - - Typ. - - - - Max. 1.8 1.7 15 200 150 300 14 Units V A A °C Units °C/W Units V µA ns ns V ©2000 Fairchild Semiconductor International Rev. F, September 2000 Typical Characteristics 100 Forward Current , I F [A] 10 TJ = 125oC 1 TJ = 25oC Capacitance , Cj [pF] 0.1 0.0 0.4 0.8 1.2 1.6 Forward Voltage , VF [V] 2.0 Figure 1. Typical Forward Voltage Drop vs. Forward Current 300 250 200 150 100 50 0 0.1 Typical Capacitance at 0V = 220 pF 1 10 Reverse Voltage , V [V] R 100 Figure 3. Typical Junction Capacitance 2000 Stored Recovery Charge , Q rr [nC] 1500 1000 500 di/dt = 100A/µs di/dt = 50A/µs 0 1 2 3 4 5 6 7 8 9 10 Forward Current , I [A] F Figure 5. Typical Stored Charge vs. Forward Current ©2000 Fairchild Semiconductor International Average Forward Current , I F(AV) [A] Reverse Recovery Time , t rr [ns] Reverse Current , I R [µA] 1000 100 10 TJ = 125oC 1 T = 100oC J 0.1 0.01 TJ = 25oC 0.001 0 300 600 900 1200 Reverse Voltage , VR [V] Figure 2. Typical Reverse Current vs. Reverse Voltage 1500 400 300 di/dt = 50A/µs 200 di/dt = 100A/µs 100 0 1 2 3 4 5 6 7 8 9 10 Forward Current , I [A] F Figure 4. Typical Reverse Recovery Time vs. Forward Current 15 10 DC 5 0 80 100 120 140 160 Case Temperature , TC [oC] Figure 6. Forward Current Derating Curve Rev. F, September 2000 FFPF10U150S FFPF10U150S Package Dimensions TO-220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 (1.00x45°) 12.00 ±0.20 6.68 ±0.20 15.87 ±0.20 15.80 ±0.20 (6.50) (1.80) 9.75 ±0.30 MAX1.47 0.80 ±0.10 2.54TYP [2.54 ±0.20] 0.35 ±0.10 2.54TYP [2.54 ±0.20] 9.40 ±0.20 2.76 ±0.20 0.50 +0.10 –0.05 4.70 ±0.20 ©2000 Fairchild Semiconductor International Dimensions in Millimeters Rev. F, September 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the effectiveness. user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production No Identification Needed Full Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a lat.


65GW6600 F10U150S EP9351


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