MTEA2N15Q8

CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15Q8 BVDSS ID RDSON@VGS=10V, ID=3.9A RDSON@VGS=5.5V, ID=3.3A 150V 4A 122mΩ(typ) 140mΩ(typ) Description The MTEA2N15Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating package Symbol MTEA2N15Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTEA2N15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V,TC=100°C Continuous Drain Current @VGS=10V,TA=25°C Continuous Drain Current @VGS=10V,TA=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=2A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits 150 ±20 4 2.5 3.2 2 16 *1 2 0.2 0.05 *2 5 2 3.1 1....