MTEA2N15L3

CYStech Electronics Corp. Spec. No. : C880L3 Issued Date : 2012.10.03 Revised Date : 2013.10.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15L3 BVDSS ID RDSON@VGS=10V, ID=1.6A RDSON@VGS=5.5V, ID=1A Description 150V 3A 125mΩ(typ) 141mΩ(typ) The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications. Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Symbol MTEA2N15L3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTEA2N15L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEA2N15L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880L3 Issued Date : 2012.10.03 Revised Date : 2013.10.25 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V,TC=100°C Continuous Drain Current @VGS=10V,...