MTEA0N10Q8

CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA0N10Q8 BVDSS ID RDSON@VGS=10V, ID=4A RDSON@VGS=5.5V, ID=3A 100V 5.6A 76mΩ(typ) 90mΩ(typ) Features Single Drive Requirement Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Symbol MTEA0N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTEA0N10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEA0N10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C (Note 1) Continuous Drain Current @VGS=10V,TC=100°C (Note 1) Continuous Drain Current @VGS=10V,TA=25°C (Note 2) Continuous Drain Current @VGS=10V,TA=100°C (Note 2) Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=5.6A, RG=25Ω (Note 2) Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=100℃ (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Operating Junctio...