MTEA0N10J3

CYStech Electronics Corp. Spec. No. : C871J3 Issued Date : 2013.01.03 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTEA0N10J3 BVDSS ID Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (Note 1) Continuous Drain Current @ VGS=10V, TC=100°C (Note 1) Continuous Drain Current @ VGS=10V, TA=25°C (Note 2) Continuous Drain Current @ VGS=10V, TA=100°C (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=0.5mH, ID=11A, RG=25Ω (Note 2) Repetitive Avalanche Energy@ L=0.1mH (Note 3) Total Power Dissipation @TC=25℃ (Note 1) Total Power Dissipation @TC=100℃ (Note 1) Total Power Dissipation @TA=25℃ (Note 2) Total Power Dissipation @TA=70℃ (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD PDSM Tj, Tstg MTEA0N10J3 Limits 100 ±20 16 11 3.7 2.3 64 11 30 6 60 30 2.5 1.6 -55~+175 Unit V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871J3 Issued Date : 2013.01.03 Revised Date : Page No. : 2/10 Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-...