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MTE080N15KJ3 Dataheets PDF



Part Number MTE080N15KJ3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE080N15KJ3 DatasheetMTE080N15KJ3 Datasheet (PDF)

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A 80 mΩ(typ) Symbol MTE080N15KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G .

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A 80 mΩ(typ) Symbol MTE080N15KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE080N15KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE080N15KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=10mH, ID=5A, VDD=50V TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) (Note 2) (Note 2) Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Limits 150 ±20 14 8.9 3.2 2.6 56 9 125 50 20 2.5 1.6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.5 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=5A, VGS=10V, VDD=50V MTE080N15KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) 150 - - - 0.13 - 2.0 - 4.0 - 12.6 - - - ±10 - -1 - - 10 - 84.4 106 V V/°C V S μA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=85°C VGS =10V, ID=10A Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg - 17.8 26.7 - 4.2 - nC VDD=120V, ID=14A,VGS=10V - 6.4 - - 10 - - 33.4 - 36.8 - ns VDS=75V, ID=14A, VGS=10V, RG=10Ω - 24.2 - - 712 - - 85 - pF VGS=0V, VDS=25V, f=1MHz - 36 - - 11.8 - Ω f=1MHz Source-Drain Diode *IS - *VSD - *trr - *Qrr - - 14 0.83 1.2 48 93 - A V IS=10A, VGS=0V ns nC VGS=0V, IF=14A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE080N15KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 4/ 9 Typical Characteristics ID, Drain Current(A) Typical Output Characteristics 40 35 10V, 9V, 8V, 7V 30 25 VGS=6V 20 15 10 5 0 0 VGS=5.5V VGS=5V VGS=4.5V 24 68 VDS, Drain-Source Voltage(V) 10 Static Drain-Source On-State resistance vs Drain Current 1000 BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=6V 1 Tj=25°C 0.8 100 0.6 Tj=150°C VGS=10V 0.4 RDS(ON), Static Drain-Source OnState Resistance(mΩ) 10 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 450 400 ID=10A 350 300 250 200 150 100 50 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture 2.8 2.4 VGS=10V, ID=10A 2 1.6 1.2 0.8 0.4 RDS(ON)@Tj=25°C : 84.4 mΩ typ 0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTE080N15KJ3 CYStek Product Specification CYStech Electronics Corp. Spec.


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