Document
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE080N15KJ3
Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=10A
150V 14A
3.2A 80 mΩ(typ)
Symbol
MTE080N15KJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE080N15KJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTE080N15KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=10mH, ID=5A, VDD=50V
TC=25°C
Power Dissipation
TC=100°C TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1) (Note 1) (Note 2) (Note 2) (Note 3)
(Note 4) (Note 1) (Note 1) (Note 2) (Note 2)
Symbol VDS VGS ID
IDSM IDM IAS EAS
PD
PDSM Tj, Tstg
Limits
150 ±20 14 8.9 3.2 2.6 56
9
125
50 20 2.5 1.6 -55~+150
Unit V
A
mJ W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol RθJC RθJA
Value 2.5 50
Unit °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=100μH, IAS=5A, VGS=10V, VDD=50V
MTE080N15KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) *GFS IGSS
IDSS
*RDS(ON)
150 -
-
- 0.13 -
2.0 - 4.0
- 12.6 -
- - ±10
- -1
- - 10
- 84.4 106
V V/°C
V S
μA
mΩ
VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=10A VGS=±20V
VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=85°C VGS =10V, ID=10A
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
Rg
- 17.8 26.7
- 4.2 -
nC VDD=120V, ID=14A,VGS=10V
- 6.4 -
- 10 -
- 33.4 - 36.8 -
ns VDS=75V, ID=14A, VGS=10V, RG=10Ω
- 24.2 -
- 712 -
- 85 -
pF VGS=0V, VDS=25V, f=1MHz
- 36 -
- 11.8 -
Ω f=1MHz
Source-Drain Diode
*IS -
*VSD
-
*trr -
*Qrr -
- 14 0.83 1.2 48 93 -
A
V IS=10A, VGS=0V
ns nC
VGS=0V, IF=14A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTE080N15KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 4/ 9
Typical Characteristics
ID, Drain Current(A)
Typical Output Characteristics 40
35 10V, 9V, 8V, 7V 30
25 VGS=6V
20
15
10 5
0 0
VGS=5.5V
VGS=5V VGS=4.5V 24 68 VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current 1000
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
VGS=6V
1
Tj=25°C
0.8
100 0.6 Tj=150°C
VGS=10V
0.4
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
10 0.1
1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
500
450 400 ID=10A
350 300
250 200
150 100
50 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.8 2.4 VGS=10V, ID=10A
2
1.6 1.2
0.8
0.4 RDS(ON)@Tj=25°C : 84.4 mΩ typ
0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTE080N15KJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec.