MTE05N08E3

CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N08E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 80V 180A 4.3mΩ 4.5mΩ Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTE05N08E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device MTE05N08E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton MTE05N08E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) (Note 1) (Note 3) Continuous Drain Current @ TA=25°C (Note 2) Continuous Drain Current @ TA=70°C (Note 2) Avalanche Current (Note 3) Avalanche Energy @ L=0.1mH, ID=90A, RG=25Ω (Note 2) Repetitive Avalanche Energy@ L=0.1mH (Note 3) Power Dissipation TC=25°C TC=100°C (Note 1) (Note 1) Power Dissipation TA=25°C TA=70°C (Note 2) (Note 2) Operating Junction and Storage Temperature Symbol VDS VGS ID IDM IDSM IAS EAS EAR PD PDSM Tj, Tstg Limits 80 ±25 180 127 500 14 11 30 405 33 333 167 2 1.3 -55~+175 Unit V A mJ W W °C Thermal Da...