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MTE050P10E3

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTE050P10E3 BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic ...

Cystech Electonics

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