SW75N75

SW75N75 Features  High ruggedness  Low RDS(ON) (Typ 6mΩ)@VGS=10V  Low Gate Charge (Typ 126nC)  Improved dv/dt Capability  100% Avalanche Tested  ApplicationSynchronous Rectification, Li Battery Protect Board, DC-DC N-channel Enhanced mode TO-220 MOSFET TO-220 12 3 1. Gate 2. Drain 3. Source BVDSS : 75V ID : 75A RDS(ON) : 6mΩ 2 1 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 3 Order Codes Item Sales Type 1 SW P 75N75 Marking SW 75N75 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Value 75 75* 47.3* 28 ±30 1004 45 7 312 2.5...