MBR2040CT

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SCHOTTKY BARRIER DIODE MBR2040CT MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications Package TO-22O TO-22OF TO-220HF z z， z z， z（RoHS） FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product 1/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage TC=150℃ Average forward (TO-220) current TC=125℃ (TO-220F, TO-220HF) per device per diode VDC IF(AV) Surge non repetitive forward current （ 8.3ms — JEDEC ） 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG MBR2040CT Value 40 Unit V 40 V 20 A 10 150 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ) Value(max) 20 20 VF Tj =25℃ Tj =125℃ IF=10A 0.63 0.7 0.56 0.6 Unit μA mA V V THERMAL CHARACTERISTICS Parameter Thermal resistance from junction to case TO-220 TO-220F TO-220HF Symbol Rth(j-c) Value(min) Value(max) Unit 1.7 2.7 ℃/W 2.7 2/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd MBR2040C...