BRD70N03

BRD70N03 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ，，。 Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 12 3 PIN1：G 4 PIN 2：D PIN 3：S PIN 4：D / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BRD70N03 Rev.D May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Junction-to-Ambient Operating and Storage Temperature Range Symbol VDSS ID(Tc=25℃) IDM VGSS EAS PD PD(Tc=25℃) RθJA TJ,Tstg Rating 30 62.8 140 ±20 71.7 1.36 62.5 110 -55 to 150 Unit V A A V mJ W W ℃/W ℃ / Electrical Characteristics(Ta=25℃) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=20V VGS=0V IGSS VGS=±20V VDS=0V VGS(th) RDS(on) gFS VDS=VGS VGS=10V VGS=4.5V VDS...