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D5N50 Dataheets PDF



Part Number D5N50
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 5A N-Channel MOSFET
Datasheet D5N50 DatasheetD5N50 Datasheet (PDF)

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ .

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AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ 5A < 1.6Ω Top View TO252 DPAK Bottom View D D S G G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H ID IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 500 ±30 5 3.1 17 2.8 118 235 5 104 0.83 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 43 1 Maximum 55 0.5 1.2 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: June 2010 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD5N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A gFS Forward Transconductance VDS=40V, ID=2.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 500 600 V 0.6 V/ oC 1 10 µA ±100 nΑ 3.4 4.1 4.5 V 1.2 1.6 Ω 5S 0.76 1 V 5A 17 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 430 538 670 40 58 80 2.5 4.5 7 1.2 2.3 3.5 pF pF pF Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=400V, ID=5A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=250V, ID=5A, tD(off) Turn-Off DelayTime RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 9 11.5 14 3 3.8 4.6 2 4.1 6.2 18 32 34 22 145 182 220 1.7 2.2 2.7 nC nC nC ns ns ns ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: June 2010 www.aosmd.com Page 2 of 6 Free Datasheet http://www.datasheet4u.com/ AOD5N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 10 10V 8 6 6.5V 6V 4 VGS=5.5V 2 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 4.0 3.5 3.0 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 ID=30A 1.1 1 125°C ID(A) 100 VDS=40V 10 125°C -55°C 1 Normalized On-Resistance 0.1 2 3 25°C 468 VGS(Volts) Figure 2: Transfer Characteristics 10 2.5 VGS=10V ID=2.5A 2 1.5 1 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 40 1.0E+00 1.0E-01 1.


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