XP151A13A0MR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 N - Channel MOS FET ( 1 device built-in ) Pin Assignment PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain Absolute Maximum Ratings PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 0.5 4 1 0.5 150 -55 to 150 ( note ) : When implemented on a ceramic PCB Ta=25OC UNITS V V A A A W OC OC Shenzhen Tuofeng Semiconductor T...