2021

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.310@ VGS=4.5V 0.360@ VGS=2.5V 0.460@ VGS=1.8V Descriptions The 2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product 2021 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-323 Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift z SOT-323 D 3 12 GS Pin configuration (Top view) Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2021 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA =25°C Symbol VDS VGS ID 10 S Steady State 20 ±6 0.58 0.55 Unit V A Maximum Power Dissipation Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA =25°C PD IDM TJ TL Tstg 0.37 0.31 1.4 150 260 -55 to 150 W A °C °C °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a t ” 10 s Steady State Junction-to-Ambient Thermal Resistance b t ” 10 s Steady State Junction-to-Case Thermal Resistance Steady State Symbol RșJA RșJA RșJC Typical 275 325 375 445 260 Maximum 335 395 430 535 300 Unit °C/W She...