2016

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 4.2 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V VDS=0V, VGS=±12V VDS=VGS I...