TF2323

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 20-V (D-S) MOSFET TF2323 PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 0.043 @ VGS = -4.5 V 0.054 @ VGS = -2.5 V 0.075 @ VGS = -1.8 V ID (A) -4.0 - 4.0 - 2.0 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch D PA Switch (SOT-23) G1 S2 3D Top View TF2323 (D32TF) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS -20 $8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 25_C ID IDM IS PD TJ, Tstg -4.0 -20 -1.0 -0.6 1.25 0.75 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. 1 Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2323 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain...