APM2317

Shenzhen Tuofeng Semiconductor Technology Co., Ltd APM2317 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G D P-Channel MOSFET 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd APM2317 Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter VDSS VGSS ID* IDM* IS* TJ TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* Thermal Resistance-Junction to Ambient Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec. VGS=-4.5V TA=25°C Rating -20 ±12 -4.5 -18 -1 150 -55 to 150 0.83 150 Unit V A A °C W °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions STATIC CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=-250µA VDS=-16V, VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V VGS=-4.5V, IDS=-4.5A RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2.5A VSDa Diode Forward Volta...