TF2302

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.065 @ VGS = 4.5 V 20 0.090 @ V GS = 2.5 V ID (A) 3.0 2.0 (SOT-23-3L) (SOT-23) G1 S2 3D Top View TF2302 (A2sHB )* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 20 "8 Continuous Drain Current (TJ = 150_C)b TA= 25_C ID 3.0 Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b IDM 10 IS 1.6 Power Dissipationb TA= 25_C PD 1.25 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA Limit 100 166 Unit V A W _C Unit _C/W 2-1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2302 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS =16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = ...