TF2301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 P-Channel TF2301MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.120 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V ID (A) - 2.8 - 1.8 (SOT-23-3L) (SOT-23) G1 S2 3D Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS - 2.8 - 10 - 1.6 Power Dissipationb TA= 25_C PD 1.25 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA Limit 100 166 Unit V A W _C Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time Symbol Test Conditions V(BR)DSS VGS(th) IGSS IDS...