TF2300

SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT N-Channel Enhancement Mode Field Effect Transistor TF2300 Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range * Surface Mounted on FR 4 Board ,t 10 sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 10 6.0 20 1.25 100 -55 to 150 Unit V V A A W /W Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Ta = 25 TF2300 Parameter Symbol Testconditons Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VDSS IDSS VGS=0V,ID=250uA VDS=16V,VGS=0V Gate-Body Leakage IGSS VGS= 10V,VDS=0V Gate Threshold Voltage * Drain- Source on-state Resistance * VGS(th) VGS=VDS,ID=250uA VGS=10.0V,ID=6.0A RDS(ON) VGS=2.5V,ID=3.0A VGS=1.8V,ID=2.0A On-State Drain Current * Forward Transconductance * ID(ON) VDS=5V,VGS=4.5V gFS VDS=15V,ID=6A Input Capacitance CISS Output Capacitance COSS VDS = 15V, VGS = 0V,f =1.0MHZ Re...