Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1938
DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 18 A
Ptot Total Dissipation@TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
1.25 ℃/W 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1938
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
500
V
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current
VDS= VGS; ID=1mA VGS= 10V; ID=9A VGS=±30V;VDS= 0 VDS=500V; VGS= 0
2.5 3.5 V
0.25 0.35
Ω
±100 nA
500 µA
Ciss Input capacitance
3300 4950
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
80 120 pF
Coss Output capacitance
340 510
tr Rise time ton Turn-on time tf Fall time
VGS=10V;ID=18A; VDD=300V; RL=10Ω
80 120
35 55 ns
120 180
toff Turn-off time
190 285
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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.