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K1938 Dataheets PDF



Part Number K1938
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SK1938
Datasheet K1938 DatasheetK1938 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1938 DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Opera.

  K1938   K1938


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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1938 DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.25 ℃/W 30 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 2SK1938 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 500 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VDS= VGS; ID=1mA VGS= 10V; ID=9A VGS=±30V;VDS= 0 VDS=500V; VGS= 0 2.5 3.5 V 0.25 0.35 Ω ±100 nA 500 µA Ciss Input capacitance 3300 4950 Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 80 120 pF Coss Output capacitance 340 510 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A; VDD=300V; RL=10Ω 80 120 35 55 ns 120 180 toff Turn-off time 190 285 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


SSS7N60 K1938 D5NK40Z


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