SSS1N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 12 A VDSS 600 V Rdson（@Vgs=10V） 0.65Ω Qg 39nC Package z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 23pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking SSS12N60 SSS12N60 Package TO-220F Halogen Free NO Packaging Tube Device Weight 2.15 g(typ) 1/9 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLUTE RATINGS (Tc=25℃) SSS12N60 Parameter － Drain-Source Voltage Symbol VDSS Value SSS12N60 600 Unit V ID Drain Current -continuous T=25℃ 12 A （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Current（note 1） EAR （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 48 ±30 880 12 25 4.5 250 51 2.0 0.41 55～+150 300 A V mJ A mJ V/ns W W/℃ ℃ ℃ 2/9 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 ELECTRICAL CHARACTERISTICS Parameter Off –Character...