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SDT2P02 Dataheets PDF



Part Number SDT2P02
Manufacturers SeCoS
Logo SeCoS
Description Dual P-Channel MOSFET
Datasheet SDT2P02 DatasheetSDT2P02 Datasheet (PDF)

Elektronische Bauelemente SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS Battery-powered instruments Portable computing Mobil.

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Elektronische Bauelemente SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS Battery-powered instruments Portable computing Mobile phones GPS units and media players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BSC. 2.00 BSC. 0.675 0.75 0.80 0.30 Typ. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.06 0.15 0.20 0.25 0.20 0.30 0.38 0.52 0.65 0.72 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current@ VGS= -4.5V 1 Pulsed Drain Current 2 Power Dissipation@ TA=25°C 1 TA=25°C TA=70°C ID IDM PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 t≦5 sec Steady State RθJA Rating -20 ±8 -2.2 -1.7 -8.8 1.5 -55~150 83 125 Unit V V A A W °C °C / W http://www.SeCoSGmbH.com/ 12-Aug-2017 Rev. D Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS -20 - - Gate-Threshold Voltage VGS(th) -0.5 - -1 Forward Transconductance gFS - 3.4 - Gate-Body Leakage Current IGSS - - ±100 Zero Gate Voltage Drain Current IDSS - - -1 - -10 Drain-Source On-Resistance 3 Total Gate Charge 3 RDS(ON) Qg - 170 200 240 280 4.6 - Gate-Source Charge Qgs - 0.27 - Gate-Drain Charge Turn-On Delay Time 3 Qgd Td(ON) - 2.34 11.6 - Rise Time Tr - 6.2 - Turn-Off Delay Time Td(OFF) - 31.8 - Fall Time Tf - 2.8 - Input Capacitance Ciss - 194 - Output Capacitance Coss - 35.5 - Reverse Transfer Capacitance Crss - 28.2 - Source-Drain Diode Characteristics Diode Forward Voltage 3 VSD - -0.85 Continuous Source Current 1 IS - - Pulsed Source Current 3 ISM - - Notes: 1. The surface of the device is mounted on a 1” x 1” FR4 board with 2OZ copper. 2. Pulse width is limited by the maximum junction temperature. 3. Pulse test: Pulse width≦300µs, duty cycle≦2%. -1.3 -2.2 -8.8 Unit Test Condition V VGS=0, ID= -250µA V VDS=VGS, ID= -250µA S VDS= -5V, ID= -2A nA VDS=0, VGS= ±8V VDS= -16V, VGS=0, TJ=25°C µA VDS= -16V, VGS=0, TJ=55°C VGS= -4.5V, ID= -2A mΩ VGS= -2.5V, ID= -1.5A VDS= -20V nC VGS= -4.5V ID= -2A VDD= -12V nS VGS= -4.5V RG=3.3Ω ID= -1A VDS= -15V pF VGS=0 f=1MHz V IS= -0.9A, VGS=0 mA VG=VD=0V, Force Current mA http://www.SeCoSGmbH.com/ 12-Aug-2017 Rev. D Any changes of specification will not be informed individually. Page 2 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET http://www.SeCoSGmbH.com/ 12-Aug-2017 Rev. D Any changes of specification will not be informed individually. Page 3 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET http://www.SeCoSGmbH.com/ 12-Aug-2017 Rev. D Any changes of specification will not be informed individually. Page 4 of 4 .


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