Document
Elektronische Bauelemente
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation.
DFN2x2-6L-J
FEATURES
Low RDS(on) trench technology Low thermal impedance Fast switching speed
APPLICATIONS
Battery-powered instruments Portable computing Mobile phones GPS units and media players
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75 0.80
0.30 Typ.
0.75 0.86
1.1
0.65BSC
REF.
G H J K L P
Millimeter Min. Typ. Max.
0.30 BSC 0.20 BSC 0 -- 0.06 0.15 0.20 0.25 0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS= -4.5V 1
Pulsed Drain Current 2 Power Dissipation@ TA=25°C 1
TA=25°C TA=70°C
ID
IDM PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient 1
t≦5 sec Steady State
RθJA
Rating -20 ±8 -2.2 -1.7 -8.8 1.5
-55~150
83 125
Unit V V A A W °C
°C / W
http://www.SeCoSGmbH.com/
12-Aug-2017 Rev. D
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
Gate-Threshold Voltage
VGS(th)
-0.5
-
-1
Forward Transconductance
gFS - 3.4 -
Gate-Body Leakage Current
IGSS
-
- ±100
Zero Gate Voltage Drain Current
IDSS
-
- -1 - -10
Drain-Source On-Resistance 3 Total Gate Charge 3
RDS(ON) Qg
-
170 200 240 280 4.6 -
Gate-Source Charge
Qgs - 0.27 -
Gate-Drain Charge Turn-On Delay Time 3
Qgd Td(ON)
-
2.34 11.6
-
Rise Time
Tr - 6.2 -
Turn-Off Delay Time
Td(OFF)
-
31.8
-
Fall Time
Tf - 2.8 -
Input Capacitance
Ciss - 194 -
Output Capacitance
Coss - 35.5 -
Reverse Transfer Capacitance
Crss
-
28.2
-
Source-Drain Diode Characteristics
Diode Forward Voltage 3
VSD - -0.85
Continuous Source Current 1
IS -
-
Pulsed Source Current 3
ISM -
-
Notes: 1. The surface of the device is mounted on a 1” x 1” FR4 board with 2OZ copper. 2. Pulse width is limited by the maximum junction temperature. 3. Pulse test: Pulse width≦300µs, duty cycle≦2%.
-1.3 -2.2 -8.8
Unit Test Condition
V VGS=0, ID= -250µA
V VDS=VGS, ID= -250µA
S VDS= -5V, ID= -2A
nA VDS=0, VGS= ±8V
VDS= -16V, VGS=0, TJ=25°C µA
VDS= -16V, VGS=0, TJ=55°C
VGS= -4.5V, ID= -2A mΩ
VGS= -2.5V, ID= -1.5A
VDS= -20V nC VGS= -4.5V
ID= -2A
VDD= -12V
nS
VGS= -4.5V RG=3.3Ω
ID= -1A
VDS= -15V pF VGS=0
f=1MHz
V IS= -0.9A, VGS=0
mA VG=VD=0V, Force Current
mA
http://www.SeCoSGmbH.com/
12-Aug-2017 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 4
Elektronische Bauelemente CHARACTERISTIC CURVE
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET
http://www.SeCoSGmbH.com/
12-Aug-2017 Rev. D
Any changes of specification will not be informed individually.
Page 3 of 4
Elektronische Bauelemente CHARACTERISTIC CURVE
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET
http://www.SeCoSGmbH.com/
12-Aug-2017 Rev. D
Any changes of specification will not be informed individually.
Page 4 of 4
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