CJS8205

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETs CJS8205 Dual N-channel MOSFET V(BR)DSS 19 V RDS(on)MAX  25mΩ@4.5V  32mΩ@2.5V   ID 6A TSSOP8 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management MARKING Equivalent Circuit S8205 YY S8205 YY S8205= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM RθJA TJ TSTG TL Value 19 ±10 6 25 125 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ www.cj-elec.com 1 A-1,Jul,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =18V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =6A VGS =2.5V, ID =5A Forward tranconductance (note 3...