S8205A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type N MMOOSFSEFTET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A Features 5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V rDS(on) = 0.040 @ VGS = 2.5 V. TSSOP-8 Unit: mm Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD R JA R JC Tj.Tstg Rating 20 8 5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type N MOSMFOETSFET S8205A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol Testconditons VDSS VGS = 0 V, ID = 250 A IDSS IGSS VDS = 16V , VGS = 0V VDS = 0V , VGS = 8V Gate Threshold Voltage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle VGS(th) VDS = VGS , ID = 250uA rDS(on) VGS = 4.5V , ID = 5A VGS = 2.5V , ID = 4A ID(on) VDS = 5V , VGS = 4.5V gfs VDS = ...