8810

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets ROHS & Sony 259 specifications). 8810 is electrically identical. Features VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) ESD Rating: 2000V HBM D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6 30 1.5 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 64 89 53 Max 83 120 70 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd Electrical Characteristics (T =25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Curren...