Dual N-Channel MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. ...
Description
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Ta=25
Pulsed Drain Current Maximum Power Dissipation
TA = 25 TA = 70
Symbol VDS VGS
ID
IDM
PD
10 secs
Steady Sate 20
10
6.5
30 2.0 1.25 1.3 0.8
Unit V V A
A
W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain)
t 10 sec Steady State Steady State
* Surface Mounted on 1" X 1"FR4 Board.
Symbol RthJA RthJF
Typ 50 80 30
Max Unit 62.5 100 /W 40
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
9926B
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS VDS =16V , VGS = 0V
Min Typ Max Unit 20 V
1 uA
Gate-Body Leakage Gate Threshold Voltage
Drain-Source On-State Resistance *
On-State Drain Current * Forward Transconductance * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle
IGSS VDS = 0V , VGS = 10V
VGS(th) VDS = VGS , ID = 250uA
VGS = 4.5V , ID = 6.5A rDS(on)
VGS = 2.5V , ID = 5.5A
ID(on) VDS 5V , VGS = ...
Similar Datasheet