9926A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady State * Surface Mounted on 1" X 1"FR4 Board. Symbol RthJA RthJF Typ 50 80 30 Max Unit 62.5 100 /W 40 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET 9926A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Testconditons VDSS IDSS VGS = 0 V, ID = 250 A VDS =16V , VGS = 0V Min Typ Max Unit 20 V 1 uA Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle IGSS VDS = 0V , VGS = 10V VGS(th) VDS = VGS , ID = 250uA VGS = 4.5V , ID = 6A rDS(on) VGS = 2.5V , ID = 5.2A ID(on) VDS 5V , VGS = 4.5V gfs ...