4953B

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB 4953B Dual 20V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings . Applications Power management Load switch Battery protection Features –3.5 A, –20 V RDS(ON) = 70 mΩ @ VGS = –4.5V RDS(ON) = 135mΩ @ VGS = –2.5 V Low gate charge (6nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability DD1DD22D2 DD1 SO-8 Pin 1 SO-8 S2GG2 SS1GS1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current – Continuous (Note 1a) PD TJ, TSTG Power Dissipation for Dual Operation Operating and Storage Junction Temperature Range 5 6 Q1 7 Q2 8 4 3 2 1 Ratings –20 ±10 –3.5 1.5 –55 to +175 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 4953B 4953B 13’’ 78 40 Tape width 12mm °C/W °C/W Quantity 2500 units Shenzhen Tuofeng Semiconductor Technology Co., L4t9d 53B Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions M...