Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
4803 Dual P-Channel Enhancement Mode Field Effect Transistor
G...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
4803 Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product 4803 is Pb-free (meets ROHS & Sony 259 specifications). AO4803 is a Green Product ordering option. 4803 is electrically identical.
Features
VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V)
SOIC-8 Top View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum -30 ±20 -5
-20 2 1.4 -55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 48 74 35
Max 62.5 110 40
Units V V
A
W °C
Units °C/W °C/W °C/W
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Conditions
ID=-250µA, VGS=0V VDS=-24V, VGS=0V
IGSS VGS(th) I...