4803

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product 4803 is Pb-free (meets ROHS & Sony 259 specifications). AO4803 is a Green Product ordering option. 4803 is electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -20 2 1.4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V IGSS VGS(th) I...