4612

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4612 Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 55mΩ (VGS=10V) < 60mΩ (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) < 95m Ω (VGS = -4.5V) D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current A TA=25°C ID 4.5 Pulsed Drain Current B IDM 20 Max p-channel -60 ±20 -3.2 -20 Units V V A Power Dissipation TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State 2 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch 2 -55 to 150 W °C Typ Max Units 48 62.5 °C/W 74 110 °C/W 35 60 °C/W 48 62.5 °C/W 74 110 °C/W 35 40 °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4612 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ Max Units 60 V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V 1 µA IGSS VGS(...