Dual MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4542
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin De...
Description
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4542
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
N-Channel
30V/6.9A, RDS(ON)=27.44mΩ @VGS =10V R DS(ON)=41.16mΩ @VGS =4.5V
P-Channel
-30V/-6.9A, R DS(ON)=32.00mΩ @VGS =10.0V R DS(ON)=50.00mΩ @VGS =4.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged SO-8 Package
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
SO-8
D1 D1
S2
G2 G1
Applications
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered Systems.
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4542
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS VGSS
ID* IDM
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed
PD Maximum Power Dissipation
TA=25 C °
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
RθjA Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t ≤ 10 sec.
N-Channel 30 ±20 6.9 28
P-Channel -30 ±20 -6.9 -20
22
150 -55 to 150
62.5
Unit V
A
W °C °C °C/W
Electrical Characteristics
(T A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static BVDSS
Drain-Source Breakdown Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
VDS=24V , VGS=0V VDS=-24V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA
IGSS Gate Leakage C...
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