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4409 Dataheets PDF



Part Number 4409
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description P-Channel MOSFET
Datasheet 4409 Datasheet4409 Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -12A 12 @ VGS = -10V ,ID=-12A 15 @ VGS = -4.5V ,ID=-10A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Parameter Drain Cu.

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -12A 12 @ VGS = -10V ,ID=-12A 15 @ VGS = -4.5V ,ID=-10A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Parameter Drain Current @TA=25oC IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC IS Maximum Diode Forward Current Tj, Tstg RqJA Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Ratings -30 ±20 -12 -60 30 135 3 2.1 -2.1 -55 to +150 50 Units V V A A A mJ W A °C °C/W 1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions · Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V IGSS Gate-Body Leakage Current · On Characteristicsc VGS(th) Gate Threshold Voltage IDS(on) On State Drain Current VGS=±25V, VDS=0V VDS=VGS, ID=-250uA VDS=-5V, VGS=-10V RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-12A VGS=-4.5V, ID=-10A gFS Forward Transconductance · Dynamic Characteristics d VDS=-10V, ID=-5A Ciss Input Capacitance Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate Resistance · Switching Characteristicsd VDS=0V, VGS=0V, f=1MHz Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V, ID=-12A, VGS=-10V Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time VDD=-15V, RL=1.25W, VGS=-10V, RG=3W tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IDS=-12A, dI/ dt=100A/ uS · Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1A IS Drain-Source Diode Forward Current Note: Pulse Test: Pulse Width £300us, Duty Cycle£2% Min. Typ. Max. Unit -30 - - V - - -1 uA - - ±100 nA -1.0 60 -- -- 26 -3.0 V -A 12 mW 10 -S - 2076 2500 - 503 - pF - 302 423 1 2 3W - 37.2 - - 7 - nC - 10.4 - - 12.4 - - 8.2 - 25.6 - nS - 12 - - 33 40 nS - 23 - nC - - -1 V - - -4.2 A 2 Shenzhen Tuofeng Semiconductor Technology co., LTD Characteristics Curve 4409 3 Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 Characteristics Curve 4 .


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