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Part Number 4401
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description P-Channel MOSFET
Datasheet 4401 Datasheet4401 Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.1 -5.1 -60 3 2.1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-24V, VGS=0V Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-6.1A Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=2.4Ω, RGEN=6Ω Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs Min -30 -0.7 7 Typ Max Units -1 -5 ±100 -1 -1.3 38 49 76 11 -0.75 46 70 61 117 -1 -4.2 V µA nA V A mΩ mΩ mΩ S V A 940 pF 104 pF 73 pF 6Ω 9.4 nC 2 nC 3 nC 7.6 ns 8.6 ns 44.7 ns 16.5 ns 22.7 ns 15.9 nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 15 10 -4.5V -3V -2.5V -ID(A) 10 VDS=-5V 8 6 4 125°C -ID (A) 5 VGS=-2V 2 25°C RDS(ON) (mΩ) 0 012345 -VDS (Volts) Fig 1: On-Region Characteristics 120 100 VGS=-2.5V 80 60 VGS=-4.5V 40 20 0.00 2.00 4.00 VGS=-10V 6.00 8.00 10.00 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 0 0 1.6 1.4 0.5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics ID=-5A VGS=-4.5V VGS=-10V 3 1.2 VGS=-2.5V ID=-2A 1 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 175 RDS(ON) (mΩ) 190 170 150 ID=-2A 130 110 90 70 125°C 50 30 25°C 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125°C 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS -VGS (Volts) 5 VDS=-15V 4 ID=-5A 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 1400 1200 1000 800 Ciss 600 400 Coss 200 Crss 0 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 -ID (Amps) 100.0 TJ(Max)=150°C TA=25°C 10µs 10.0 RDS(ON) limited 100µs 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 Power (W) 40 TJ(Max)=150°C TA=25°C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 10 D=Ton/T I.


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