Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4401
4401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V)
SOIC-8 Top View
SD SD SD GD
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD TJ, TSTG
Maximum -30 ±12 -6.1 -5.1 -60 3 2.1
-55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units V V
A
W
°C
Units °C/W °C/W °C/W
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS IDSS IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V VDS=-24V, VGS=0V
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-6.1A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.4Ω, RGEN=6Ω
Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Min -30 -0.7
7
Typ Max Units
-1 -5 ±100 -1 -1.3
38
49 76 11 -0.75
46 70 61 117
-1 -4.2
V
µA
nA V A
mΩ
mΩ mΩ S V A
940 pF 104 pF 73 pF
6Ω
9.4 nC 2 nC 3 nC 7.6 ns 8.6 ns 44.7 ns 16.5 ns 22.7 ns 15.9 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -10V
20
15
10
-4.5V
-3V -2.5V
-ID(A)
10 VDS=-5V
8
6
4 125°C
-ID (A)
5
VGS=-2V
2
25°C
RDS(ON) (mΩ)
0 012345
-VDS (Volts) Fig 1: On-Region Characteristics
120
100 VGS=-2.5V
80
60 VGS=-4.5V
40
20 0.00
2.00
4.00
VGS=-10V 6.00 8.00
10.00
-ID (A) Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
0 0
1.6 1.4
0.5 1 1.5 2 2.5 -VGS(Volts)
Figure 2: Transfer Characteristics
ID=-5A VGS=-4.5V VGS=-10V
3
1.2 VGS=-2.5V ID=-2A
1
0.8 0
25 50 75 100 125 150
Temperature (°C) Figure 4: On-Resistance vs. Junction
Temperature
175
RDS(ON) (mΩ)
190
170
150 ID=-2A
130
110
90 70 125°C
50 30 25°C
10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
-IS (A)
1.0E+01
1.0E+00
1.0E-01 1.0E-02
125°C
1.0E-03 1.0E-04
25°C
1.0E-05
1.0E-06 0.0
0.2 0.4 0.6 0.8 1.0
-VSD (Volts) Figure 6: Body-Diode Characteristics
1.2
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-VGS (Volts)
5 VDS=-15V
4 ID=-5A
3
2
1
0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics
Capacitance (pF)
1400
1200
1000 800
Ciss
600
400
Coss 200
Crss
0 0 5 10 15 20 25
-VDS (Volts) Figure 8: Capacitance Characteristics
30
-ID (Amps)
100.0
TJ(Max)=150°C TA=25°C
10µs
10.0
RDS(ON) limited
100µs
1ms
0.1s 10ms 1.0
1s
10s DC
0.1
0.1 1 10 -VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
100
Power (W)
40 TJ(Max)=150°C
TA=25°C
30
20
10
0 0.001 0.01
0.1
1
10 100 1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
I.