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CFY66-08

Infineon Technologies AG

HiRel K-Band GaAs Super Low Noise HEMT

CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEM...



CFY66-08

Infineon Technologies AG


Octopart Stock #: O-104601

Findchips Stock #: 104601-F

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Description
CFY66 HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY66-08 (ql) CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) - see below G Micro-X CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230 Unit V V V mA mA dBm °C °C mW °C So...




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