CFY30

GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY 30 A2 Q62703-F97 S D S G SOT-143 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 70°C) 2) Thermal resistance Channel-soldering point 2) Symbol Value 5 7 -4 ... +0.5 80 150 -40...+150 250 Unit V V V mA °C °C mW VDS VDG VGS ID TCh Tstg Ptot RthChS <320 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 GaAs FET CFY 30 ________________________________________________________________________________________________________ Electrical characteristics at TA = 25°C, unless otherwise specified Characteristics Drain-source saturation current V = 3.5 V, DS Symbol min typ max Unit mA V =0V GS IDSS VGS(P) gm IG F 20 50 80 V Pinch-off voltage V = 3.5 V DS I = 1 mA D -0.5 -1.3 -4.0 mS Transcond...