Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBTH10LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.225 W (Tamb=25℃)
Collector current
ICM: 0.05 Collector-base voltage
A
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Test conditions
Ic= 100µA, IE=0
Ic= 1 mA, IB=0
IE= 10µA, IC=0
VCB=25V, IE=0 VEB= 2V, IC=0
MIN 30 25 3
DC current gain Collector-emitter saturation voltage Base-emitter voltage
Transition frequency
hFE(1) VCE(sat) VBE(on)
fT
VCE=10V, IC= 4mA
IC=4 mA, IB= 0.4mA VCE= 10V, IC= 4mA VCE=10V, IC= 4mA
f=100MHz
60 650
MAX UNIT V V V
0.1 µA 0.1 µA
0.5 V 0.95 V
MHz
DEVICE MARKING
MMBTH10LT1=3EM
.