Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1 TRANSISTOR (PNP)
...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate
Transistors
MMBT5401LT1
TRANSISTOR (
PNP)
FEATURES
Power dissipation
PCM:
0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 Collector-base voltage
A
V(BR)CBO:
-160 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR -
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
voltage
Base-emitter
Transition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO HFE(1) HFE(2) HFE(3) VCE(sat) saturation VBE(sat)
fT
Test conditions
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
IE= -10µA, IC=0
VCB=-120V, IE=0 VEB=-4V, IC=0
VCE= -5V, IC= -1mA VCE= -5V, IC=-10mA VCE= -5V, IC=-50mA IC=-50mA, IB= -5mA
IC= -50mA, IB= -5mA
VCE= -5V, IC= -10mA
f=30MHz
MIN -160 -150
-5
80 100 50
MAX UNIT V V V
-0.1 µA -0.1 µA
200
-0.5 V
-1 V
100 MHz
DEVICE MARKING
MMBT5401LT1=2L
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
MMBT5401LT1
Typical Characteristics
hFE - TYPICAL PULSED CURRENT GAIN
BESATV - BASE-EMITTER VOLTAGE (V)
200
VCE = 5V
150 125 oC
100 25 oC
50 - 40 oC
0 1E-4
1E-3
0.01
0.1
IC - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain vs Collector Cur...