MMBT5551LT1

TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage. .......................................................................................180 V VCEO Collector to Emitter Voltage. ....................................................................................160 V VEBO Emitter to Base Voltage ...............................................................................................6 V IC Collector Current ........................................................................ .................................600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 180 160 6 80 80 30 100 - Typ. - Max. 50 50 0.15 0.2 1 1 250 300 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100uA IC=1.0mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1.0mA IC=50mA, IB=...