TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5401LT1 is designed for gener...
TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) Complements to
NPN Type MMBT5551LT1.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature .............................................................................................. -55~+150 °C Junction Temperature ..................................................................................... +150°C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage .................................................................................... 150 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ......................................................................................................... 500mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO
ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
hFE1 hFE2 hFE3
fT Cob
Min. 160 150
5 50 60 50 100 -
Typ. -
Max. 50
200 500
1 1 240 300 6
Unit V V V nA mV...