MMBT3906LT1

RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipation:Pc=225mW Collector-Emitter Voltage:VCEO=-40V .,LTPNP Epitaxial Silicon Transistor 1.9 2.9 0.2 0.97Ref. 0.124 0.10 0.4 0.5Ref. 2.3 0.2 1.3 0.2 2 3 1 0.38Ref. 0.5Ref. 2A Marking MINO.1 OTolerance:0.1mm 0.01-0.10 1.EMITTER 2.BASE 3.COLLECTOR CAbsolute Maximum Ratings Parameter Collector-Base Voltage ICCollector-Emitter Voltage Emitter-Base Voltage Collector Current NCollector Dissipation Junction Temperature OStorage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating -40 -40 -5 -200 225 150 -50~150 (Ta=25 oC) Unit V V V mA mW OC O C RElectrical Characteristics TParameter Collector-Emitter Breakdown Voltage CCollector-Base Breakdown Voltage Emitter-Base Breakdown Voltage ECollector Cut-off Current Emitter-Base Cutoff Current LDC Current Gain EDC Current Gain DC Current Gain DC Current Gain JDC Current Gain Collector-Emitter Saturation Voltage ECollector-Emitter Saturation Voltage WBase-Emitter Saturation Voltage (Ta=25 oC) Symbol MIN. TYP. MAX. Unit Condition BVCEO BVCBO BVEBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) -40 -40 -5 60 80 100 60 30 -50 -50 300 -0.4 -0.25 -0.95 V IC=-1mA IB=0 V IC=-10 A IE=0 V IE=-10 A IC=0 nA VCB=-30V, VEB=-3V nA VCB=-3V, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA V IC=-50mA, IB=-5mA V IC=-10mA, IB=-1mA V...