MMBT3906LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature Value -40 -40 -5 -0.2 0.3 -55-150 Units V V V A W ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -40 Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -40 Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 Collector cut-off current ICBO VCB= -40 V , IE=0 Collector cut-off current ICEO VCE= -40 V , IB=0 Emitter cut-off current IEBO VEB= -5V , IC=0 DC current gain hFE(1) hFE(2) VCE=-1V, IC=-10mA VCE= -1V, IC=-50mA 100 60 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB=-5mA Base-emitter saturation voltage VBE(sat) IC=- 50 mA, IB=- 5mA MAX -0.1 -0.1 -0.1 300 -0.3 -0.95 UNIT V V V µA µA µA V V Transition frequency fT VCE= -20V, IC= -10mA f=100MHz 250 MHz Delay Time Rise Time Storage Time Fall Time td VCC=-3.0V,VBE=-0.5V tr IC=-10mA,IB1=-1.0mA ts VCC=-3.0V,IC=-10mA tf IB1=IB2=-1.0mA 35 nS 35 nS 225 ...