Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S9015LT1 TRANSISTOR (PNP)
FE...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate
Transistors
S9015LT1
TRANSISTOR (
PNP)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: -0.1 Collector-base voltage
A
V(BR)CBO:
-50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.1mA, IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
Collector cut-off current
ICBO VCB=-50V, IE=0
Emitter cut-off current
IEBO VEB= -5V, IC=0
DC current gain
hFE(1)
VCE=-5V, IC= -1mA
200
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -10mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
MAX UNIT V V V
-0.1 µA -0.1 µA
1000 -0.3 V -1 V
Transition frequency
VCE=-5V, IC= -10mA
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1) Rank Range
L 200-400
H 400-600
DEVICE MARKING
S9015LT1=M6
Typical Characteristics
S9015LT1
...
