SS8050LT1

SS8050LT1 NPN Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 40 25 5 1500 625 150 -65~+150 V V V mA mW oC oC Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBEF fT IC= 100µA, IE= 0 IC= 0.1mA, IB= 0 IE= 100µA, IC= 0 VCB= 40V, IE= 0 VCE= 20V, IB= 0 VEB= 5V, IC= 0mA VCE= 1V, IC= 50mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50mA IC= 500mA, IB= 50mA IE= 100mA VCE= 6V, IC= 20mA f= 30MHz Min Max Unit 40 V 25 V 6V 0.1 0.1 0.1 120 350 µA µA µA 40 0.5 V 1.2 V 1.6 V 100 MHz hFE(1) CLASSIFICATION Classification L hFE(1) 120-200 Device Marking SS8050LT1=Y1 H 200-350 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyan...